Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1989-06-27
1996-02-20
Hjerpe, Richard
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257352, H01L 2904
Patent
active
054931290
ABSTRACT:
A thin film transistor structure for use in driving liquid crystal display elements has a semiconductor active layer, a control electrode layer underlying the active layer with an insulating layer interposed therebetween and first and second main electrode layers formed on or above the active layer in a spaced relation with each other to define a channel in the active layer in cooperation with the control electrode layer between the main electrode layers. The active layer has a first peripheral edge portion generally perpendicular to the direction of the channel and a second peripheral edge portion generally not perpendicular to the direction of the channel. The first and/or second main electrode layer extends over the first and/or second peripheral edge portion of the active layer such that at least a part of the first peripheral edge portion and/or at least part of the second peripheral edge portion of the active layer has its side face directly covered with the main electrode layer.
REFERENCES:
patent: 4431271 (1984-02-01), Okubo
patent: 4597001 (1986-06-01), Borstscheller
patent: 4686553 (1987-08-01), Possin
patent: 4804953 (1989-02-01), Castleberry
Newest Amorphous Silicon Handbook, 1983, p. 386.
Kenmotsu Akihiro
Koshita Toshiyuki
Matsuzaki Eiji
Nakatani Mitsuo
Takano Takao
Hitachi , Ltd.
Hjerpe Richard
Nguyen Chanh
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