Thin-film transistor structure for liquid crystal display having

Details Thin-film transistor structure for liquid crystal display having Thin-film transistor structure for liquid crystal display having

1998-01-02

1999-10-12

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 59, 257 72, 349 43, 349 44, 349110, 349137, G02F 1133

Patent

active

059659165

ABSTRACT:
A thin-film transistor structure having a storage-capacitor-on-gate and a black matrix for manufacturing a liquid crystal display is disclosed. A metal layer is deposited and patterned as a black matrix on a glass substrate of the thin-film transistor plate. An insulating layer having a contact hole for contacting the black matrix is formed over the surface of the black matrix and the substrate. An inverted thin-film transistor having a metal gate on the bottom is then fabricated on top of the insulating layer. The thin-film transistor controls an ITO pixel electrode of the liquid crystal display. A gate line including the metal gate of the thin-film transistor is formed over and above a space between two adjacent black matrixes. The gate line is connected to one of the two black matrixes by the contact hole. The other black matrix serves as a light shield element of the ITO pixel electrode. The technique is also applicable to the manufacturing of a non-inverted thin-film transistor having a metal gate on the top.

REFERENCES:
patent: 5510916 (1996-04-01), Takahashi
patent: 5789761 (1998-08-01), Ihara et al.

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