Thin film transistor structure and method of manufacturing...

Details Thin film transistor structure and method of manufacturing... Thin film transistor structure and method of manufacturing...

2007-07-03

2007-07-03

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C257SE21414

Reexamination Certificate

active

10980954

ABSTRACT:
The present invention improves the quality of the TFT structure by avoiding photo-induced current, and lowers manufacturing costs by decreasing the number of masks required in the process, wherein the former is achieved by the stacked structure including a gate layer, an insulation layer, an amorphous silicon layer and an ohmic contact layer, and the latter is achieved by using the stacked structure as a mask and by exposing the substrate from the back surface.

REFERENCES:
patent: 5485038 (1996-01-01), Licari et al.
patent: 5917199 (1999-06-01), Byun et al.
patent: 6274400 (2001-08-01), Jen
patent: 06/084946 (1994-03-01), None

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