Thin film transistor self-aligned to a light-shield layer

Details Thin film transistor self-aligned to a light-shield layer Thin film transistor self-aligned to a light-shield layer

2005-12-06

2005-12-06

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S160000, C257S072000

Reexamination Certificate

active

06972219

ABSTRACT:
A method of manufacturing a thin film transistor with a reduced number of manufacturing steps is provided, in which the possibility of light entering the channel forming layer of the thin film transistor can be obviated. The thin film transistor comprising a gate electrode (16a), a drain electrode (12a), a source electrode (17a) and a channel (24) and a shield layer (21) on a transparent substrate (20). The channel (24) is formed in that a channel forming layer is photolithographically patterned with the shield layer (21) as mask. As shield layer (21), the gate electrode (16a) can be used, this giving a bottom gate thin film transistor. The transistor is very suitable for use in a liquid crystal display.

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