Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2006-10-03
2009-11-10
Mandala, Victor A (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S763000, C257S766000, C257S770000, C257SE29117, C257SE29151
Reexamination Certificate
active
07615867
ABSTRACT:
A TFT includes a gate electrode, an active layer, a source electrode, a drain electrode, and a buffer layer. The gate electrode is formed on the substrate; the active layer is formed on the gate electrode. The source and drain electrodes, formed on the active layer, are separated by a predetermined distance. The buffer layer is formed between the active layer and the source and drain electrodes. The buffer layer has a substantially continuously varying content ratio corresponding to a buffer layer thickness. The buffer layer is formed to suppress oxidation of the active layer, and reduce contact resistance.
REFERENCES:
patent: 6255706 (2001-07-01), Watanabe et al.
patent: 2005/0161740 (2005-07-01), Park et al.
patent: 2006/0076562 (2006-04-01), Lee et al.
Choi Jae-Ho
Choi Yong-Mo
Kim Byoung-June
Oh Min-Seok
Yang Sung-Hoon
Innovation Counsel LLP
Mandala Victor A
Samsung Electronics Co,. Ltd.
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