Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-25
2010-11-16
Andújar, Leonardo (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21413, C349S042000, C349S043000
Reexamination Certificate
active
07834397
ABSTRACT:
A thin film transistor (TFT), a method of fabricating the same, and a display device including the TFT, are provided. In the TFT, a channel region is connected to a gate electrode so that the influence of a substrate bias is reduced or eliminated. Thus, the threshold voltage of the TFT is reduced, a subthreshold slope can be improved, and a large drain current can be obtained at a low gate voltage.
REFERENCES:
patent: 6028580 (2000-02-01), Kosegawa et al.
patent: 6252247 (2001-06-01), Sakata et al.
patent: 6828584 (2004-12-01), Arao et al.
patent: 7064388 (2006-06-01), Hayakawa et al.
patent: 7189997 (2007-03-01), Tsunoda et al.
patent: 7271870 (2007-09-01), Ono et al.
patent: 7279714 (2007-10-01), Koo et al.
patent: 7368724 (2008-05-01), Morii et al.
patent: 7411298 (2008-08-01), Kawakami et al.
patent: 7430024 (2008-09-01), Yagi et al.
patent: 7450192 (2008-11-01), Ono et al.
patent: 2004/0222429 (2004-11-01), Yamazaki et al.
patent: 2005/0082530 (2005-04-01), Koo et al.
patent: 2005/0088582 (2005-04-01), Park et al.
patent: 2005/0205866 (2005-09-01), Kim et al.
patent: 2005/0218405 (2005-10-01), Yamazaki et al.
patent: 2006/0181198 (2006-08-01), Gotoh et al.
patent: 2008/0006826 (2008-01-01), Kawachi
patent: 2008/0156368 (2008-07-01), Hirose et al.
patent: 10-229199 (1998-08-01), None
patent: 2001-44441 (2001-02-01), None
patent: 10-2005-0036625 (2005-04-01), None
Patent Abstracts of Japan, Publication No. 10-229199, dated Aug. 25, 1998, in the name of Tatsuya Okubo et al.
Patent Abstracts of Japan, Publication No. 2001-044441, dated Feb. 16, 2001, in the name of So Nakayama.
Korean Patent Abstracts, Publication No. 1020050036625 A, dated Apr. 20, 2005, in the name of Byoung Deog Choi et al.
Choi Byoung-Deog
Park Byoung-Keon
So Myeong-Seob
Andújar Leonardo
Christie Parker & Hale LLP
Harriston William
Samsung Mobile Display Co., Ltd.
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