Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-09-14
2009-02-03
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S151000, C438S166000
Reexamination Certificate
active
07485505
ABSTRACT:
The present invention provides a thin-film transistor offering a higher electron (or hole) mobility, a method for manufacturing the thin-film transistor, and a display using the thin-film transistor. The present invention provides a thin-film transistor having a source region, a channel region, and a drain region in a semiconductor thin film with a crystal grown in a horizontal direction, the thin-film transistor having a gate insulating film and a gate electrode over the channel region, wherein a drain edge of the drain region which is adjacent to the channel region is formed in the vicinity of a crystal growth end position.
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Kawachi Genshiro
Matsumura Masakiyo
Nakazaki Yoshiaki
Warabisako Terunori
Advanced LCD Technologies Development Center Co. Ltd.
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Picardat Kevin M
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