Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-09-26
1999-11-30
Bowers, Charles
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438149, 438151, 438197, H01L 310392, H01L 2978, H01L 21306
Patent
active
059941731
ABSTRACT:
A thin film transistor matrix device comprises an insulating substrate, a plurality of picture element electrodes arranged in a matrix on the insulating substrate, source electrodes connected to the respective picture element electrodes, drain electrodes opposed to the respective source electrodes, operational semiconductor layers sandwiched by the source electrodes and the drain electrodes, and gate electrodes formed on the operational semiconductor layers through gate insulating films, each gate electrode being narrowed with respect to the associated gate insulating film so that side walls of the gate electrode forms a step with respect to side walls of the associated gate insulating film which is a substrate of the gate electrode. The gate electrode is made narrower with respect to the gate insulating film to form a step between the side walls of the gate electrode with respect to those of the gate insulating film, whereby leak currents from the source electrode or the drain electrode to the gate electrode along the mesa side surfaces of the TFT can be simply suppressed. Accordingly a TFT matrix device having little wasteful current consumption can be realized.
REFERENCES:
patent: 4601097 (1986-07-01), Shimbo
patent: 4778560 (1988-10-01), Takeda et al.
patent: 4894690 (1990-01-01), Okabe et al.
patent: 4990460 (1991-02-01), Moriyama
patent: 5032531 (1991-07-01), Tsutsui et al.
patent: 5032536 (1991-07-01), Oritsuki et al.
patent: 5084905 (1992-01-01), Sasaki et al.
patent: 5107355 (1992-04-01), Satoh et al.
patent: 5123847 (1992-06-01), Holmberg et al.
patent: 5124823 (1992-06-01), Kawasaki et al.
patent: 5156986 (1992-10-01), Wei et al.
patent: 5206749 (1993-04-01), Zavracky et al.
patent: 5212574 (1993-05-01), Katayama et al.
patent: 5314770 (1994-05-01), Yamasita et al.
patent: 5374837 (1994-12-01), Uno
patent: 5561075 (1996-10-01), Nakazawa
patent: 5757445 (1998-05-01), Vu et al.
patent: 5814539 (1998-09-01), Nakzawa
patent: 5828082 (1998-10-01), Wu
Ohgata Koji
Okabe Masahiro
Oki Ken-ichi
Takizawa Yutaka
Tanaka Tsutomu
Bowers Charles
Fujitsu Limited
Sulsky Martin
LandOfFree
Thin film transistor matrix device and method for fabricating th does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor matrix device and method for fabricating th, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor matrix device and method for fabricating th will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1671100