Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-07-11
2006-07-11
Coleman, W. David (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C438S149000
Reexamination Certificate
active
07075108
ABSTRACT:
A thin film transistor matrix device including an insulating substrate, a plurality of thin film transistors arranged on the insulating substrate, and a plurality of picture element electrodes arranged on the insulating substrate in a matrix and connected to the thin film transistors. The device also includes a plurality of bus lines made of a first conducting film, a first insulating film formed on the first conducting film, a second conducting film formed on the first insulating film, and a second insulating film formed on the first insulating film and the second conducting film. Additionally, first and second contact holes are formed outside an image display region in which the plurality of picture elements are formed. The first conducting film is connected to the third conducing film via the first contact hole, and the second conducting film is connected to the third conducting film via the second contact hole.
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Patent Abstracts of Japan “Liquid Crystal Display Device and Its Production”, Hirano Takuya et al. Publication No. 07-244295, translation).
Hayashi Shougo
Kinjo Takeshi
Okamoto Kenji
Tachibanaki Makoto
Takizawa Hidaki
Coleman W. David
Fujitsu Limited
Greer Burns & Crain Ltd.
Nguyen Khiem
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