Thin film transistor, liquid crystal display using thin film...

Details Thin film transistor, liquid crystal display using thin film... Thin film transistor, liquid crystal display using thin film...

2007-01-09

2007-01-09

Fourson, George (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21411

Reexamination Certificate

active

11052224

ABSTRACT:
A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode and a width of the drain electrode located over the gate electrode. Irregularities are formed in a width direction of the semiconductor film on both edge portions in the channel region.

REFERENCES:
patent: 5213990 (1993-05-01), Rodder
patent: 2004/0196416 (2004-10-01), Cho et al.
patent: 2005/0051780 (2005-03-01), Ando et al.
patent: 2000-164886 (2000-06-01), None
patent: 2001-324725 (2001-11-01), None
patent: 2002-55364 (2002-02-01), None
patent: 2002-57338 (2002-02-01), None

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