Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal
Patent
1996-01-11
1998-10-06
Sikes, William L.
Liquid crystal cells, elements and systems
Particular excitation of liquid crystal
Electrical excitation of liquid crystal
349187, 438 30, 438229, G02F 11333, G02F 1136
Patent
active
058185518
ABSTRACT:
A thin film transistor-liquid crystal display (TFT-LCD) and a method of manufacturing the same prevent a short by forming a pixel electrode and a data line on different layers, and enhance the resultant image produced by the TFT-LCD by forming a passivation layer at a lower pixel electrode. To form this TFT-LCD, a gate electrode and an adjacent gate electrode are formed on a substrate. A gate insulating layer is then deposited on both the gate electrode and the adjacent gate electrode and an amorphous silicon layer, an N.sup.+ amorphous silicon layer, and a source/drain metal are sequentially formed on the gate insulating layer, and partially etched. A passivation layer surrounds the source/drain metal and the amorphous silicon layer is etched using the passivation layer as a mask. A pixel electrode is then formed on the upper gate insulating layer in which the amorphous silicon layer is not deposited.
REFERENCES:
patent: 5289016 (1994-02-01), Noguchi
patent: 5367179 (1994-11-01), Mori
patent: 5483082 (1996-01-01), Takizawa et al.
patent: 5610737 (1997-03-01), Akiyama et al.
patent: 5621556 (1997-04-01), Fulks et al.
Parker Kenneth
Samsung Electronics Co,. Ltd.
Sikes William L.
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