Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-03
2006-10-03
Smith, Matthew (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S161000, C438S197000, C257SE51005, C257SE33004
Reexamination Certificate
active
07115448
ABSTRACT:
The present invention improves a productivity in growing an a-Si film in a thin film transistor and to obtain an excellent thin film transistor characteristic. More specifically, disclosed is a thin film transistor in which an amorphous silicon film2, a gate insulating film3and a gate electrode are sequentially stacked on an insulating substrate1. The amorphous silicon film2includes a low defect-density amorphous silicon layer5formed at a low deposition rate and a high deposition rate amorphous silicon layer6formed at a deposition rate higher than that of the low defect-density amorphous silicon layer5. The low defect-density amorphous silicon layer5in the amorphous silicon film2is grown closer to the insulating substrate1, and the high deposition rate amorphous silicon layer6is grown closer to the gate insulating film3.
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Miyamoto Takashi
Morooka Mitsuo
Tokuhiro Osamu
Tsujimura Takatoshi
AU Optronics Corporation
Jefferson Quovaunda
Scully , Scott, Murphy & Presser, P.C.
Smith Matthew
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