Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-04-29
2008-12-30
Gurley, Lynne A. (Department: 2811)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S048000, C438S128000, C438S151000, C438S157000, C438S283000, C257SE29151, C257SE29117, C257SE29137
Reexamination Certificate
active
07470572
ABSTRACT:
A manufacturing method and the structure of a thin film transistor liquid crystal display (TFT-LCD) are disclosed. The TFT-LCD uses metal electrodes as a mask to thoroughly remove the unwanted semiconductor layer during the etching process for forming the source and drain electrodes. This manufacturing method can reduce the problems caused by the unwanted semiconductor layer, hence improving the quality of the TFT.
REFERENCES:
patent: 6140668 (2000-10-01), Mei et al.
patent: 6218221 (2001-04-01), Sah
patent: 6297161 (2001-10-01), Sah
Au Optronics Corporation
Gebremariam Samuel A
Gurley Lynne A.
Ladas & Parry LLP
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