Thin film transistor liquid crystal display and...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S048000, C438S128000, C438S151000, C438S157000, C438S283000, C257SE29151, C257SE29117, C257SE29137

Reexamination Certificate

active

07470572

ABSTRACT:
A manufacturing method and the structure of a thin film transistor liquid crystal display (TFT-LCD) are disclosed. The TFT-LCD uses metal electrodes as a mask to thoroughly remove the unwanted semiconductor layer during the etching process for forming the source and drain electrodes. This manufacturing method can reduce the problems caused by the unwanted semiconductor layer, hence improving the quality of the TFT.

REFERENCES:
patent: 6140668 (2000-10-01), Mei et al.
patent: 6218221 (2001-04-01), Sah
patent: 6297161 (2001-10-01), Sah

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