Thin film transistor, liquid crystal display and...

Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned

Reexamination Certificate

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C438S482000, C438S542000, C438S597000

Reexamination Certificate

active

07112500

ABSTRACT:
The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.

REFERENCES:
patent: 5591989 (1997-01-01), Miyasaka et al.
patent: 5637512 (1997-06-01), Miyasaka et al.
patent: 5913113 (1999-06-01), Seo
patent: 5990489 (1999-11-01), Tashiro
patent: 6214684 (2001-04-01), Shoji
patent: 6214705 (2001-04-01), Ting
patent: 6391691 (2002-05-01), Tsujimura et al.
patent: 6444508 (2002-09-01), Tanabe et al.
patent: 6624051 (2003-09-01), Ohtani et al.
patent: 2001/0022633 (2001-09-01), Kwak et al.
patent: 02-050131 (1990-02-01), None
patent: 08-051211 (1996-02-01), None
“Off Current Dependence on Farbrication Process of a Back-Channel-Etching-Type a-Si TFT” by Washizuka et al. (IDW 1997 pp. 207-210).
Nikkei Microdevices (Jun. 2000 p. 175).

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