Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – Self-aligned
Reexamination Certificate
2006-09-26
2006-09-26
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
Self-aligned
C438S482000, C438S542000, C438S597000
Reexamination Certificate
active
07112500
ABSTRACT:
The present invention provides a thin film transistor comprising a drain electrode and a source electrode separated by a channel region formed over a contact portion with an amorphous silicon layer and wherein an impurity from the channel region is removed and a remaining impurity is diffused into the contact portion to form a contact layer wherein the contact layer has a second resistance at least lower than the first resistance.
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“Off Current Dependence on Farbrication Process of a Back-Channel-Etching-Type a-Si TFT” by Washizuka et al. (IDW 1997 pp. 207-210).
Nikkei Microdevices (Jun. 2000 p. 175).
Ando Masahiko
Kawasaki Masahiro
Wakagi Masatoshi
Dickstein & Shapiro LLP
Kebede Brook
Nguyen Khiem
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