Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-05-28
1997-12-09
Fahmy, Wael
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 49, 257 59, 257 66, 257 72, 349 41, 349 42, H01L 2904, H01L 31036
Patent
active
056963874
ABSTRACT:
A thin film transistor liquid crystal display exhibits a high field effect mobility to permit a high on-current while maintaining a lower off-current. The LCD-TFT has both a microcrystallized silicon layer and an amorphous silicon layer which together serve as a channel layer. An extrinsic semiconductor layer is formed to be in contact with both the microcrystallized silicon layer and the amorphous silicon layer and source and drain electrodes are formed on the extrinsic semiconductor layer.
REFERENCES:
patent: 5326712 (1994-07-01), Bal
Choi Joon-hoo
Jang Geun-ha
Abraham Fetsum
Fahmy Wael
Samsung Electronics Co,. Ltd.
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