Thin film transistor in a liquid crystal display having a microc

Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material

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257 49, 257 59, 257 66, 257 72, 349 41, 349 42, H01L 2904, H01L 31036

Patent

active

056963874

ABSTRACT:
A thin film transistor liquid crystal display exhibits a high field effect mobility to permit a high on-current while maintaining a lower off-current. The LCD-TFT has both a microcrystallized silicon layer and an amorphous silicon layer which together serve as a channel layer. An extrinsic semiconductor layer is formed to be in contact with both the microcrystallized silicon layer and the amorphous silicon layer and source and drain electrodes are formed on the extrinsic semiconductor layer.

REFERENCES:
patent: 5326712 (1994-07-01), Bal

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