Thin film transistor, image display device, and image...

Details Thin film transistor, image display device, and image... Thin film transistor, image display device, and image...

2006-05-02

2006-05-02

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S059000, C257S072000, C257S084000, C257S296000, C257S401000

Reexamination Certificate

active

07038278

ABSTRACT:
A thin film transistor is circular when viewed from top. A first source/drain region is disposed at the center, a semiconductor layer surrounds the first source/drain region and overlaps with an external periphery of the first source/drain region, and a second source/drain region surrounds the semiconductor layer and overlaps the external periphery of the semiconductor layer. The potential of the second source/drain region is set higher than the potential of the first source/drain region. The external periphery of the first source/drain region and the internal periphery of the second source/drain region have concentric circular shapes.

REFERENCES:
patent: 6191453 (2001-02-01), Petruzzello et al.
patent: 6525383 (2003-02-01), Stecher
patent: 6650001 (2003-11-01), Yamaguchi et al.
patent: 8-148690 (1996-06-01), None
patent: 2762968 (1998-03-01), None

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