Thin film transistor having LDD structure

Details Thin film transistor having LDD structure Thin film transistor having LDD structure

2007-06-26

2009-02-17

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C257SE21435

Reexamination Certificate

active

07491591

ABSTRACT:
A thin film transistor having a LDD structure that may improve its channel reliability and output characteristics. A semiconductor layer comprises source/drain regions, a channel region positioned between the source/drain regions, and an LDD region positioned between the channel region and a source/drain region, wherein a projected range of ions doped on the semiconductor layer extends to a first depth from the surface of the semiconductor layer in the LDD region.

REFERENCES:
patent: 5698882 (1997-12-01), Park
patent: 6127211 (2000-10-01), Hirao et al.
patent: 6833313 (2004-12-01), Hayakawa
patent: 7416927 (2008-08-01), Gottsche et al.
patent: 2002/0074550 (2002-06-01), Itoga
patent: 1213849 (1999-04-01), None
patent: 1375735 (2002-10-01), None
patent: 1389600 (2003-01-01), None
patent: 10-256557 (1998-09-01), None
patent: 2002-185008 (2002-06-01), None
patent: 10-2001-0039227 (2001-05-01), None
patent: 10-2002-0050085 (2002-06-01), None
Chinese Office Action mailed May 30, 2008.

Affiliated with

Also associated with

Rating

Thin film transistor having LDD structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor having LDD structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor having LDD structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4077895