Thin film transistor having high mobility and high on-current

Details Thin film transistor having high mobility and high on-current Thin film transistor having high mobility and high on-current

2007-10-23

2007-10-23

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S291000, C257SE31041, C257S072000, C257S066000, C438S149000, C438S154000

Reexamination Certificate

active

11410184

ABSTRACT:
An image input apparatus includes an insulating substrate; polycrystalline silicon islands formed on said insulating substrate; pixels each including thin film transistors and a photodiode formed above said thin film transistors, each of the thin film transistors have a source region, a channel region and a drain region foamed in one of the polycrystalline silicon islands.

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Japanese Office Action with translation dated Aug. 3, 2004.

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