Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1997-03-03
1998-10-27
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 59, 257 66, H01L 2904
Patent
active
058280820
ABSTRACT:
An additional high quality insulating layer is grown over the substrate after the formation of the gate electrode of a thin film transistor (TFT). The growth temperature of the insulating layer can be higher than conventional method and the insulating layer is more free of pin-holes. After the insulating layer in the thin oxide region of the TFT is etched away, conventional fabrication processes are followed. The dielectric of the thin film oxide region is the same as that of the conventional TFT; but the dielectric in the vicinity of the thin oxide region, the crossovers of the data lines and the scan lines, and the gate dielectric layer of the TFT are now composed of the high quality insulating layer. The TFT structure can improve the yield of fabrication by confining the channel region in the shadow of the gate electrode to reduce the leakage photo-current, and by reducing the steps at cross-overs steps and interconnections to avoid open-circuit.
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Nanno et al., "High Resolution 6-inch LCD using a-Si TFT with TaO.sub.x /SiN.sub.x double insulating layer," Displays, Jan. 1990, pp. 36-40.
Ackerman Stephen B.
Industrial Technology Research Institute
Jackson Jerome
Jones II Graham S.
Kelley Nathan K.
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