Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-02-23
2000-02-08
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257348, 257349, 257350, 257351, 257352, 257353, 257354, 257 59, H01L 2952
Patent
active
060230878
ABSTRACT:
A thin film transistor and its fabrication method are disclosed wherein the thin film transistor includes a semiconductor substrate, an active layer formed on an upper surface of the semiconductor substrate, a membrane layer formed on a portion of the active layer and defining an offset region in the active layer, a gate insulation layer formed on portions of the membrane layer and the active layer, a gate electrode formed on a portion of the gate insulation layer, and a source region and a drain region formed in the active layer.
REFERENCES:
Tanaka, et al., "Characteristics of Offset-Structure Polycrystalline-Silicon Thin-Film Transistors," Ron Device Letters, vol. 9 No. 1. (Jan. 1988) pp. 58-60.
Abraham Fetsum
LG Semicon Co. Ltd.
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