Thin film transistor having an asymmetrical lightly doped drain

Details Thin film transistor having an asymmetrical lightly doped drain Thin film transistor having an asymmetrical lightly doped drain

1994-03-31

1995-08-15

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257382, 257408, H01L 2701, H01L 2713, H01L 2978

Patent

active

054422159

ABSTRACT:
A thin film transistor having an asymmetrical LDD structure which can remove a kink phenomenon (i.e., unstable operation characteristic) of the TFT. According to the TFT, a dual LDD junction structure is formed in the drain region by dual doping, while no junction is formed in the source region so as to remove the energy difference existing at the junction in the source region. On the source electrode, silicide may be formed in order to minimize the contact resistance between the electrode and the metallic terminal thereof.

REFERENCES:
patent: 4050965 (1977-09-01), Ipri et al.
patent: 4743837 (1988-05-01), Herzog
patent: 4899202 (1990-02-01), Blake et al.
patent: 4969023 (1990-11-01), Svedberg

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