Thin film transistor having a transparent electrode and substrat

Details Thin film transistor having a transparent electrode and substrat Thin film transistor having a transparent electrode and substrat

1992-02-05

1993-07-20

James, Andrew J.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 59, 257 72, H01L 2910, H01L 2978, H01L 2701, H01L 2713

Patent

active

052296440

ABSTRACT:
A TFT is formed on a transparent insulative substrate, and includes a gate electrode, a gate insulating film, a semiconductor film which has a channel portion, source and drain electrodes. An insulating film is formed on the TFT so as to cover at least the drain electrode and the gate insulating film. A transparent electrode is formed on at least part of insulating film except for a portion above the channel portion on the semiconductor film. The transparent electrode is electrically connected to the source electrode via a through hole which is formed on the insulating film at a position of the source electrode.

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