Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-02-07
2006-02-07
Jackson, Jerome (Department: 2815)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S030000, C438S163000, C438S942000, C430S312000, C430S313000
Reexamination Certificate
active
06995047
ABSTRACT:
A mask containing apertures therein which is used for fabricating a channel of a thin film transistor (TFT), wherein the pixel charging time for a TFT in a high-resolution liquid crystal display (LCD) device is reduced by minimizing the length of the channel in the TFT when the active region is made of amorphous silicon. The length of the channel can be minimized by exposing light through the apertures is an exposure mask when forming the channel.
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Birch & Stewart Kolasch & Birch, LLP
Diaz José R.
Jackson Jerome
LG.Philips LCD Co. , Ltd.
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