Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-07-07
2000-01-11
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 59, 257 72, 257 66, 257 69, 257347, 257349, H01L 29184
Patent
active
060139293
ABSTRACT:
A gate insulating film 103 is oxidized by a thermal oxidation method using a gate electrode 104 as a mask. At this time, the thickness of the gate insulating film 103 becomes thicker so that the portions indicated by 106 and 107 are obtained. The thickness of an active layer becomes thin at an end 112 of a channel, so that the distance from the gate electrode becomes long by the thickness. Then the strength of an electric field between a source and drain is relaxed by this portion. In this way, a thin film transistor having improved withstand voltage characteristics and leak current characteristics is obtained.
REFERENCES:
patent: 5314834 (1994-05-01), Mazure et al.
patent: 5616935 (1997-04-01), Koyama et al.
patent: 5668032 (1997-09-01), Holmberg et al.
patent: 5705829 (1998-01-01), Miyanaga et al.
patent: 5914494 (1999-06-01), Suzawa et al.
Abraham Fetsum
Robinson Eric J.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Thin film transistor, having a nitride film on the gate insulati does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Thin film transistor, having a nitride film on the gate insulati, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor, having a nitride film on the gate insulati will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1464344