Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
1994-09-12
2001-09-18
Lee, Eddie (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S066000, C257S618000, C257S622000, C438S280000, C438S284000
Reexamination Certificate
active
06291863
ABSTRACT:
FIELD OF THE INVENTION
This invention relates to a thin film transistor used in a highly integrated Static Random Access Memory (SRAM) or Liquid Crystal Display (LCD) and its manufacturing method and more particularly, to a thin film transistor having a multi-layer stacked channel in order to increase the current flow during the transistor's ON state by securing a enough channel width despite of the limited space available.
BACKGROUND OF THE INVENTION
Generally, conventional manufacturing methods of the thin film transistor are performed as followings: first, a semiconductor thin film for channels is formed flatly; second, a thin film transistor gate insulating layer and thin film transistor gate are formed over it; and lastly, a source/drain is formed by implanting impurities onto a portion of the semiconductor thin film.
However, when applying the above mentioned thin film transistor manufacturing technique to the manufacturing of a next generation highly integrated SRAM or LCD, the unit cell area increases greatly and as a result, the device size increases. That is why the above mentioned technique is not suited for manufacturing the highly integrated SRAM. Also, during the manufacturing process of the LCD requiring a high resolution, the unit area occupied by the thin film transistor must be minimized in order to upgrade the resolution. However, this objective can not be achieved by applying the conventional manufacturing technique of thin film transistor.
SUMMARY OF THE INVENTION
In order to overcome these problems, the present invention provides a thin film transistor having multi-layer stacked channel that is capable of increasing the current flow during the transistor's ON state. Therefore, the inventive thin film transistor provides a enough channel width although it occupies minimized area.
REFERENCES:
patent: 4903089 (1990-02-01), Hollis et al.
patent: 4979014 (1990-12-01), Hieda et al.
patent: 5221849 (1993-06-01), Goronkin et al.
patent: 5262663 (1993-11-01), Rho et al.
patent: 5324960 (1994-06-01), Pfiester et al.
patent: 60-94773 (1985-05-01), None
patent: 62-274662 (1987-11-01), None
Hyundai Electronics Industries Co,. Ltd.
Lee Eddie
Popham, Haik, Schnobrich & Kaufman, Ltd.
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