Thin film transistor having a buffering pad layer for a liquid c

Details Thin film transistor having a buffering pad layer for a liquid c Thin film transistor having a buffering pad layer for a liquid c

1996-01-11

1998-09-01

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 66, H01L 2904, H01L 2976

Patent

active

058013954

ABSTRACT:
Disclosed is a thin film transistor (TFT) having a buffering pad layer and a method for manufacturing the same. This TFT is comprised of an active polysilicon pattern formed on a substrate. An oxide film is formed on the active polysilicon pattern. An intrinsic amorphous silicon pattern is formed on the oxide film and a metal pattern on the intrinsic amorphous silicon pattern. The intrinsic amorphous silicon layer serves as a buffering pad. The ion-implantation processes and heat processes are required if other types of silicon were used as a buffering pad.

REFERENCES:
patent: 5276347 (1994-01-01), Wei et al.

Affiliated with

Also associated with

Rating

Thin film transistor having a buffering pad layer for a liquid c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor having a buffering pad layer for a liquid c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor having a buffering pad layer for a liquid c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-272051