Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-18
2007-12-18
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S409000, C257SE29120
Reexamination Certificate
active
11085111
ABSTRACT:
There is provided a thin-film transistor that is formed on an insulating substrate, is capable of a high-speed operation, has small non-uniformity among devices, is hardly susceptible to device destruction due to high voltage, and is free from the effect of a parasitic transistor that forms at an edge part of an Si island. The thin-film semiconductor device is formed using a thin-film semiconductor provided on the insulating substrate and includes a gate region for formation of a channel region through which a drain current flows. The gate region has a ring shape in plan on the insulating substrate. High concentration impurity-doped regions are dividedly provided on an inside and an outside of the ring-shaped gate region, and the channel region is formed of a plurality of fan-shaped semiconductor single-crystal portions.
REFERENCES:
patent: 5561308 (1996-10-01), Kamata et al.
patent: 5661050 (1997-08-01), den Boer et al.
patent: 5994735 (1999-11-01), Maeda et al.
patent: 6140667 (2000-10-01), Yamazaki et al.
patent: 6452211 (2002-09-01), Ohtani et al.
patent: 6559906 (2003-05-01), Kawachi et al.
patent: 6906346 (2005-06-01), Nishitani et al.
patent: 7038278 (2006-05-01), Tsujimura et al.
patent: 2001/0017683 (2001-08-01), Hiroki et al.
patent: 2003/0184507 (2003-10-01), Nakazaki
patent: 10-223898 (1998-08-01), None
patent: 11-97697 (1999-04-01), None
Wen-Yu Huang, et al., “Electrical Characteristics Study of Edgeless Structure on P-type Low Temperature Poly-Si TFT”, Digest of Technical Papers, AM-LCD 01, The Japan Society of Applied Physics, 2001 International Workshop on Active-Matrix Liquid-Crystal Displays-TFT Technologies and Related Materials-, Jul. 11-13, 2001, 6 Pages.
Endo Takahiko
Kato Tomoya
Kawachi Genshiro
Nakano Fumiki
Nakazaki Yoshiaki
Advanced LCD Technologies Development Center Co. Ltd.
Jackson Jerome
Karimy Mohammad Timor
Oblon, Spivak, McCelland, Maier & Neustadt, P.C.
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