Thin film transistor for controlling a device such as a liquid c

Details Thin film transistor for controlling a device such as a liquid c Thin film transistor for controlling a device such as a liquid c

1996-03-01

1998-10-13

Whitehead, Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 60, 257 59, 257266, 257331, 257365, 257366, H01L 2904, H01L 2976

Patent

active

058215603

ABSTRACT:
A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a drain electrode, in which a lateral length of the first gate electrode is narrower than a lateral length of the second gate electrode. Also, the first gate is electrically insulated from the active layer of semiconductor material by the first insulation layer so that the drain current saturates in a high drain voltage region.

REFERENCES:
patent: 5495119 (1996-02-01), Ikeuchi

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