Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-07-03
1999-07-20
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438976, A01L 2184
Patent
active
059267011
ABSTRACT:
An improved method of forming thin film transistors includes depositing a gate dielectric material over a gate electrode and subsequently depositing a polysilicon layer over the dielectric layer. Prior to applying a photoresist material, the polysilicon layer is coated with a protective layer of, for example, silicon oxide. A photoresist material is then applied and the polysilicon layer subsequently selectively etched to form the transistor body. Finally, any masking material is removed. The protective silicon dioxide layer prevents ion contamination of the polysilicon transistor body which can occur during the masking procedure, during the etch procedure, or during subsequent removal of any foreign mask and cleaning procedures. This will, in effect, enable one to prepare transistors with a better-defined threshold.
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Booth Richard
Sony Electronics Inc.
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