Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2011-08-02
2011-08-02
Smith, Zandra (Department: 2822)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C257S066000, C257S072000, C257SE21533
Reexamination Certificate
active
07989332
ABSTRACT:
A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode, a microcrystalline semiconductor film formed over the gate insulating film, a buffer layer formed over the microcrystalline semiconductor film, a pair of semiconductor films to which an impurity element imparting one conductivity type is added and which are formed over the buffer layer, and wirings formed over the pair of semiconductor films to which the impurity element imparting one conductivity type is added. A part of the gate insulating film or the entire gate insulating film, and/or a part of the microcrystalline semiconductor or the entire microcrystalline semiconductor includes an impurity element which serves as a donor.
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Jinbo Yasuhiro
Kawae Daisuke
Kobayashi Satoshi
Kurokawa Yoshiyuki
Yamazaki Shunpei
Patton Paul E
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Smith Zandra
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