Thin film transistor, display device and their production

Details Thin film transistor, display device and their production Thin film transistor, display device and their production

2007-02-08

2008-08-05

Ngo, Ngan (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S164000, C257SE21024, C257SE21177

Reexamination Certificate

active

07407846

ABSTRACT:
The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.

REFERENCES:
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patent: 2004/0079940 (2004-04-01), Redecker et al.
A. Salleo et al., “Plymer Thin-Film Transistor With Chemically Modified Dielectric Interface”, Applied Physics Letters, vol. 81, No. 23, pp. 4383-4385, Dec. 2, 2002.
Yen-Yi Lin et al., “Pentacene-Based Organic Thin-Film Transistors”, IEEE Transaction on Electron Devices, vol. 44, No. 8, pp. 1325-1331, Aug. 1997.
Henning Sirringhaus et al., Integrated Optoelectronic Devices Based on Conjugated Polymers:, Science vol. 280, Jun. 12, 1998, pp. 1741-1743.
Wakagi Masatoshi et al., “Dependence of Photo-Leakage Current Distribution in TFT on Amorphous-Si Properties”, Display and Imaging vol. 7, pp. 129-135, 1998.

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