Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2007-02-08
2008-08-05
Ngo, Ngan (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S164000, C257SE21024, C257SE21177
Reexamination Certificate
active
07407846
ABSTRACT:
The present method prevents malfunctions in switching caused by a light leakage current in an active matrix type thin film transistor substrate for a liquid crystal display and prevents display failures, by selectively disposing a self assembled monolayer film in a gate electrode-projected region of the surface of an insulator film with high definition, and by selectively improving the orientation order of an organic semiconductor film only in the gate electrode-projected region without improving the order at an irradiated portion with light outside the gate electrode-projected region.
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Ando Masahiko
Sasaki Hiroshi
Wakagi Masatoshi
Hitachi , Ltd.
Hogan & Hartson LLP
Ngo Ngan
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