Thin film transistor device with high symmetry

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S166000, C257SE21411

Reexamination Certificate

active

07491592

ABSTRACT:
A thin film transistor device with high symmetry is disclosed, in which the symmetrical structure of transistor is utilized to enable currents flowing in the channels of each transistor formed on a polysilicon film of a specific crystallization direction to pass the same amount of grain boundaries, thereby improving the uniformity of electrical characteristics of the device. By the thin film transistor device of the invention, not only the freedom of circuit design is increased, but also the circuit area of a TFT device occupied is reduced.

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patent: 2006/0134886 (2006-06-01), Yamazaki et al.
patent: 2007/0243670 (2007-10-01), Chen et al.

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