Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-10
2009-02-17
Lebentritt, Michael S (Department: 2829)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S166000, C257SE21411
Reexamination Certificate
active
07491592
ABSTRACT:
A thin film transistor device with high symmetry is disclosed, in which the symmetrical structure of transistor is utilized to enable currents flowing in the channels of each transistor formed on a polysilicon film of a specific crystallization direction to pass the same amount of grain boundaries, thereby improving the uniformity of electrical characteristics of the device. By the thin film transistor device of the invention, not only the freedom of circuit design is increased, but also the circuit area of a TFT device occupied is reduced.
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Chen Po-Chu
Ho King-Yuan
Birch & Stewart Kolasch & Birch, LLP
Industrial Technology Research Institute
Lebentritt Michael S
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