Thin film transistor device and method of making the same

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE27100

Reexamination Certificate

active

10492331

ABSTRACT:
The electronic device comprises a thin-film transistor (10) and can be obtained from two substrates (1, 11). In order to preclude delamination at a non-adhesive interface between a metal pattern (24, 29) and an organic layer (4), the metal pattern (24, 29) comprises apertures (30). Through these apertures (30), adhesion between the organic layer (4, 5) and organic material at the surface (111) of one of the substrates (11) can be brought about. The electronic device can be manufactured by use of microcontact printing.

REFERENCES:
patent: 6982194 (2006-01-01), Tsunoda et al.
patent: 7122835 (2006-10-01), Ikeda et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Thin film transistor device and method of making the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Thin film transistor device and method of making the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Thin film transistor device and method of making the same will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3870050

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.