Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2009-03-13
2011-11-08
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S347000, C257SE29151
Reexamination Certificate
active
08053840
ABSTRACT:
The invention relates to thin film transistors comprising novel dielectric layers and novel electrodes comprising metal compositions that can be provided by a dry thermal transfer process.
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Andrews Gerald Donald
Bailey Richard Kevin
Blanchet Graciela Beatriz
Catron, Jr. John W.
Chesterfield Reid John
E. I. du Pont de Nemours and Company
Ngo Ngan
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