Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-03-21
2008-03-11
Booth, Richard A. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21561, C438S685000
Reexamination Certificate
active
07341898
ABSTRACT:
A thin film transistor circuit device and the production method thereof is demanded for a thin film transistor circuit device, which contains wiring having a structure of an aluminum alloy in a lower layer and a molybdenum alloy in an upper layer, wherein corrosion in air of the molybdenum alloy does not proceed easily. A thin film transistor circuit device which exposes a portion of wiring covered with an insulating film that connects thin film transistors of a main circuit region formed on a center portion of a substrate to a protection circuit region formed on an outer periphery of the substrate, which contains on the exposed surface a terminal which is formed of terminal electrode metal, wherein an uppermost surface of the wiring is a molybdenum alloy comprising niobium.
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patent: 5585290 (1996-12-01), Yamamoto et al.
patent: 6188176 (2001-02-01), Nakaya et al.
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patent: 9-26598 (1997-01-01), None
patent: 2000-284326 (2000-10-01), None
Chinese Office Action dated Mar. 2, 2007, with English-Language translation.
Korean Office Action dated Feb. 13, 2006; with partial English translation.
Suzuki Seiji
Tanaka Hiroaki
Yasuda Kyounei
Booth Richard A.
McGinn IP Law Group PLLC
NEC LCD Technologies Ltd.
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