Thin film transistor circuit device, production method...

Details Thin film transistor circuit device, production method... Thin film transistor circuit device, production method...

2006-09-12

2006-09-12

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S213000, C257S288000, C438S149000

Reexamination Certificate

active

07105896

ABSTRACT:
A thin film transistor circuit device and the production method thereof is demanded for a thin film transistor circuit device, which contains wiring having a structure of an aluminum alloy in a lower layer and a molybdenum alloy in an upper layer, wherein corrosion in air of the molybdenum alloy does not proceed easily. A thin film transistor circuit device which exposes a portion of wiring covered with an insulating film that connects thin film transistors of a main circuit region formed on a center portion of a substrate to a protection circuit region formed on an outer periphery of the substrate, which contains on the exposed surface a terminal which is formed of terminal electrode metal, wherein an uppermost surface of the wiring is a molybdenum alloy comprising niobium.

REFERENCES:
patent: 5530573 (1996-06-01), Shimada
patent: 6188176 (2001-02-01), Nakaya et al.
patent: 9-26598 (1997-01-01), None
patent: 2000-284326 (2000-10-01), None
Korean Office Action dated Frb. 13, 2006; with partial English translation.

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