Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-10
2006-10-10
Pham, Long (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S149000
Reexamination Certificate
active
07118946
ABSTRACT:
A thin film transistor includes a one conductive type semiconductor layer; a source region and a drain region which are separately provided in the semiconductor layer; and a gate electrode provided above or below the semiconductor layer with an insulating film interposed therebetween, wherein the width of the junction face between the source region and the channel which is provided between the source region and drain region, is different from the width of the junction face between the above channel region and the drain region.
REFERENCES:
patent: 5385865 (1995-01-01), Nieder et al.
patent: 2003/0022471 (2003-01-01), Taketomi et al.
patent: 05-048095 (1993-02-01), None
Hiramatsu Masato
Kimura Yoshinobu
Matsumura Masakiyo
Nishitani Mikihiko
Yamamoto Yoshitaka
Kabushiki Kaisha Ekisho Sentan Gijutsu Kaihatsu Center
Pham Long
Stoel Rives LLP
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