Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2006-05-17
2009-11-10
Tran, Minh-Loan T (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257SE51006
Reexamination Certificate
active
07615783
ABSTRACT:
A thin film transistor array substrate is provided. The substrate includes an insulating substrate, a first signal line formed on the insulating substrate, a first insulating layer formed on the first signal line, a second signal line formed on the first insulating layer while crossing over the first signal line, a thin film transistor connected to the first and the second signal lines, a second insulating layer formed on the thin film transistor, the second insulating layer having dielectric constant about 4.0 or less, and the second insulating layer having a first contact hole exposing a predetermined electrode of the thin film transistor, and a first pixel electrode formed on the second insulating layer while being connected to the predetermined electrode of the thin film transistor through the first contact hole.
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English Abstract for Publication No. 2005-506711, Mar. 3, 2005.
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Choi Joon-Hoo
Hong Wan-Shick
Jung Kwan-Wook
Jung Kyu-Ha
Kim Sang-Gab
F. Chau & Associates LLC
Kuo W. Wendy
Samsung Electronics Co,. Ltd.
Tran Minh-Loan T
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