Thin film transistor array substrate using low dielectric...

Liquid crystal cells – elements and systems – Particular excitation of liquid crystal – Electrical excitation of liquid crystal

Reexamination Certificate

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Details

C349S041000, C349S042000, C257S225000

Reexamination Certificate

active

07095460

ABSTRACT:
A thin film transistor array substrate is provided. The substrate includes an insulating substrate, a first signal line formed on the insulating substrate, a first insulating layer formed on the first signal line, a second signal line formed on the first insulating layer while crossing over the first signal line, a thin film transistor connected to the first and the second signal lines, a second insulating layer formed on the thin film transistor, the second insulating layer having dielectric constant about 4.0 or less, and the second insulating layer having a first contact hole exposing a predetermined electrode of the thin film transistor, and a first pixel electrode formed on the second insulating layer while being connected to the predetermined electrode of the thin film transistor through the first contact hole.

REFERENCES:
patent: 5053844 (1991-10-01), Murakami et al.
patent: 5646756 (1997-07-01), Dohjo et al.
patent: 5671027 (1997-09-01), Sasano et al.
patent: 5920084 (1999-07-01), Gu et al.
patent: 6362028 (2002-03-01), Chen et al.

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