Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Reexamination Certificate
2011-03-29
2011-03-29
Nguyen, Cuong Q (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
C257S059000, C257SE29151, C257SE27111
Reexamination Certificate
active
07915650
ABSTRACT:
A thin-film transistor includes a semiconductor pattern, source and drain electrodes and a gate electrode, the semiconductor pattern is formed on a base substrate, and the semiconductor pattern includes metal oxide. The source and drain electrodes are formed on the semiconductor pattern such that the source and drain electrodes are spaced apart from each other and an outline of the source and drain electrodes is substantially same as an outline of the semiconductor pattern. The gate electrode is disposed in a region between the source and drain electrodes such that portions of the gate electrode are overlapped with the source and drain electrodes. Therefore, leakage current induced by light is minimized. As a result, characteristics of the thin-film transistor are enhanced, after-image is reduced to enhance display quality, and stability of manufacturing process is enhanced.
REFERENCES:
patent: 6243146 (2001-06-01), Rho et al.
patent: 2005/0095759 (2005-05-01), Cho et al.
patent: 2006/0231858 (2006-10-01), Akimoto et al.
patent: 2007/0184576 (2007-08-01), Chang et al.
Jeong Chang Oh
Kim Do Hyun
Lee Eun Guk
Lee Je Hun
Cantor & Colburn LLP
Lam Cathy N
Nguyen Cuong Q
Samsung Electronics Co,. Ltd.
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