Thin film transistor array substrate having improved...

Details Thin film transistor array substrate having improved... Thin film transistor array substrate having improved...

2011-06-07

2011-06-07

Healy, Brian M (Department: 2883)

Liquid crystal cells, elements and systems

Particular excitation of liquid crystal

Electrical excitation of liquid crystal

C349S042000, C349S187000, C349S138000, C349S139000, C349S158000, C257S043000, C257SE29296, C257SE21411, C438S030000, C438S104000

Reexamination Certificate

active

07956947

ABSTRACT:
A thin film transistor array substrate, which can have high mobility of charge and can achieve uniform electrical characteristics for wide display devices, and a method of manufacturing the thin film transistor array substrate, are provided. The thin film transistor array substrate includes an oxide semiconductor layer having a channel and formed on an insulating substrate, a gate electrode overlapping the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the gate electrode, and a passivation film formed on the oxide semiconductor layer and the gate electrode. At least one of the gate insulating film and the passivation film contains fluorine-containing silicon.

REFERENCES:
patent: 6969889 (2005-11-01), Cho et al.
patent: 7396695 (2008-07-01), Cho et al.
patent: 2004/0232443 (2004-11-01), Cho et al.
patent: 2009/0184315 (2009-07-01), Lee et al.

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