Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-04-04
2006-04-04
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S225000, C257S226000, C257S235000, C257S291000, C257S439000, C257S443000
Reexamination Certificate
active
07023035
ABSTRACT:
A thin film transistor (TFT) array substrate including a substrate, a plurality of scan lines, a plurality of data lines, a plurality of thin film transistors, a plurality of pixel electrodes and a repairing circuit is provided. The scan lines and the data lines are disposed over the substrate, therefore a plurality of pixel areas are defined. Each thin film transistor is disposed in each pixel area respectively and driven by the corresponding scan line and data line. Each pixel electrode is disposed in each pixel area respectively and electrically connected to the corresponding thin film transistor. A repairing method for TFT array substrate is also provided. The method includes connecting the repairing circuit and the defect scan line besides the break to repair and convert the line defect into two-point defect, single defect, or totally repair the line defect.
REFERENCES:
patent: 5475246 (1995-12-01), Wei et al.
patent: 6753935 (2004-06-01), Wu
Au Optronics Corporation
Jiang Chyun IP Office
Louie Wai-Sing
Pham Long
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