Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2011-05-03
2011-05-03
Garber, Charles D (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S150000, C438S151000, C438S159000, C257SE21412
Reexamination Certificate
active
07935579
ABSTRACT:
A TFT array substrate includes a gate line, a gate electrode, and a gate pad on a substrate, each of which including stacked layers of a first metal and a transparent conductive material, respectively, a pixel electrode formed of the transparent conductive material, a gate insulation layer on the substrate including the gate line and the gate electrode, the gate insulation layer having first and second open areas exposing the pixel electrode and the gate pad, a semiconductor layer formed on the gate insulation layer, a data line crossing the gate line to define a sub-pixel region, a source electrode diverging from the data line, a drain electrode spaced apart from the source electrode and connected to the pixel electrode, a data pad at an end of the data line; a masking layer covering the data line, the source electrode and the drain electrode, and an oxidation-prevention layer covering the gate pad and the data pad.
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Office Action issued in corresponding Taiwanese Application No. 095145650 on Jan. 29, 2010.
Han Sang Chul
Oh Jae Young
Park Yong In
Garber Charles D
LG Display Co. Ltd.
Morgan & Lewis & Bockius, LLP
Sene Pape
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