Thin film transistor array substrate and manufacturing...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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Details

C438S152000, C438S155000

Reexamination Certificate

active

07022557

ABSTRACT:
A thin film transistor array substrate, and its manufacturing method, that is made using a three-round mask process. Gate patterns, each of which includes a gate line consisting of a transparent metal pattern and a gate metal pattern, a gate electrode, a lower gate pad, a lower data pad, and a pixel electrode are formed using a first mask process. A second mask process forms a gate insulating pattern and a semiconductor pattern. A third mask process forms source and drain patterns, each of which includes a data line, a source electrode, a drain, electrode, an upper gate pad and an upper data pad. Additionally, the gate metal pattern on an upper portion of the pixel electrode is removed.

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patent: 2000-10168 (2000-02-01), None

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