Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-04-04
2006-04-04
Kennedy, Jennifer (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S152000, C438S155000
Reexamination Certificate
active
07022557
ABSTRACT:
A thin film transistor array substrate, and its manufacturing method, that is made using a three-round mask process. Gate patterns, each of which includes a gate line consisting of a transparent metal pattern and a gate metal pattern, a gate electrode, a lower gate pad, a lower data pad, and a pixel electrode are formed using a first mask process. A second mask process forms a gate insulating pattern and a semiconductor pattern. A third mask process forms source and drain patterns, each of which includes a data line, a source electrode, a drain, electrode, an upper gate pad and an upper data pad. Additionally, the gate metal pattern on an upper portion of the pixel electrode is removed.
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Cho Heung Lyul
Kim Woong Kwon
Nam Seung Hee
Kennedy Jennifer
LG.Philips LCD Co. , Ltd.
McKenna Long & Aldridge LLP
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