Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2011-05-24
2011-05-24
Tran, Tan N (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S059000, C257S258000, C257SE29151
Reexamination Certificate
active
07947985
ABSTRACT:
A thin film transistor array substrate and its manufacturing method are disclosed. A thin film transistor (TFT) includes a gate electrode formed on a substrate, and source and drain electrodes formed on the gate electrode and separated from each other. A common line made of the same material as the gate electrode is formed on the substrate. A storage capacitor includes a storage electrode connected with a storage electrode line and a pixel electrode formed on the storage electrode. The storage electrode and the pixel electrode are formed by patterning a transparent conductive film, and accordingly, light can be transmitted through the region where the storage capacitor is formed to thus increase an aperture ratio.
REFERENCES:
patent: 7012658 (2006-03-01), Sawasaki et al.
patent: 2005/0168664 (2005-08-01), Chae et al.
Ahn Byeong-Jae
Han Sang-Youn
Kim Dae-Cheol
Kim In-Woo
Kim Woong-Kwon
Cantor & Colburn LLP
Samsung Electronics Co,. Ltd.
Tran Tan N
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