Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1994-04-20
1994-12-20
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257 57, 257 66, 257352, 257741, 257746, 257774, H01L 2701, H01L 2713, H01L 2978
Patent
active
053748379
ABSTRACT:
An active matrix substrate in which signals are inputted by a drive IC to a plurality of gate wirings made of aluminum or the like so as to drive a plurality of pixel electrodes such that an image is formed, said active matrix substrate comprising: a drive IC mounting portion which is formed together with the pixel electrodes on a principal face of a substrate by an indium-tin-oxide (ITO) film identical with that forming the pixel electrodes; wherein the gate wirings are disposed on the ITO film of the drive IC mounting portion so as to be directly connected to the ITO film.
REFERENCES:
patent: 5066106 (1991-11-01), Sakamoto et al.
patent: 5068748 (1991-11-01), Ukai et al.
patent: 5153754 (1992-10-01), Whetlan
Matsushita Electric - Industrial Co., Ltd.
Ngo Ngan V.
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