Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1996-12-30
2000-03-28
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 57, 257 72, 349 44, 349110, 349111, H01L 31119, H01L 310224
Patent
active
060435119
ABSTRACT:
A gate insulating layer, an amorphous silicon layer, an n.sup.+ amorphous silicon layer and a metal layer are deposited in sequence after a gate line, and a gate electrode and a gate pad are formed on a substrate. The metal layer forms a data line, a source electrode, a drain electrode and a data pad on a n.sup.+ amorphous silicon layer. A patterned light shielding film and a passivation film, or a passivation film also having a function of the light shielding film are provided. The amorphous silicon layer and the gate insulating layer are etched, using the patterned light shielding film and passivation film, or the patterned passivation film also having the function of the light shielding film as the mask. Here, the gate pad, the data pad and a part of the drain electrode are exposed. A pixel electrode connected to the drain electrode, is formed and indium tin oxide (ITO) pads covering the exposed gate pad and the exposed data pad, is formed by depositing an ITO film and etching thorough the photolithography, using a fourth mask. As a result, a thin film transistor array panel used for a liquid crystal display is fabricated by only four masks.
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patent: 5483082 (1996-01-01), Takizawa et al.
patent: 5508765 (1996-04-01), Nakagawa et al.
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patent: 5648674 (1997-07-01), Weisefield et al.
U.S. application Sec. No. 08/584,070, filed Jan. 11, 1996.
Abraham Fetsum
Samsung Electronics Co,. Ltd.
Thomas Tom
LandOfFree
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