Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1996-06-25
1997-09-16
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 66, H01L 2904, H01L 29417
Patent
active
056683812
ABSTRACT:
A thin film transistor formed in a liquid crystal display, comprising; a silicon layer formed over a transparent substrate, a first insulating layer formed over the silicon layer, a gate electrode and a plurality of gate line electrodes formed on the first insulating layer, a second insulating layer formed over the gate electrode and the gate line electrodes having a plurality of contact holes, and a metal line ohmically connected to the gate electrode and the plurality of gate line electrodes through the plurality of contact holes.
REFERENCES:
patent: 3749614 (1973-07-01), Boleky, III et al.
patent: 5323042 (1994-06-01), Matsumoto
Enhanced Polysilicon Thin-Film transistor Performance By Oxide Encapsulation, by John R. Troxell and Marie I. Harrington, J. Electrochem Soc., vol. 138, No. 3, Mar. 1991.
Geary, Jr. William L.
Guay John
Jackson Jerome
Samsung Electronics Co,. Ltd.
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