Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-11-20
2007-11-20
Fourson, George R. (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S072000, C257S066000, C257S355000, C349S042000, C349S043000, C349S046000, C349S048000
Reexamination Certificate
active
11016404
ABSTRACT:
A thin film transistor array panel comprising: an insulating substrate; gate lines formed on the insulating substrate; data lines defining a display region by intersecting the gate lines while being insulated; an electrostatic dispersion line intersecting the gate lines; diodes adhered to the gate lines and to the electrostatic dispersion line; and a repair line for repairing the data lines formed on the insulating substrate outside the display region and intersecting the electrostatic dispersion line while being insulated. According to the present invention, since static electricity flowing along the repair line is not transferred to the data lines, defects of a thin film transistor of the display region may be prevented.
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Jung Cheol-Soo
Lim Do-Gi
Fourson George R.
MacPherson Kwok Chen & Held LLP
Parker John M.
Samsung Electronics Co,. Ltd.
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