Thin film transistor array panel and method of manufacturing...

Details Thin film transistor array panel and method of manufacturing... Thin film transistor array panel and method of manufacturing...

2007-04-03

2010-02-16

Trinh, Michael (Department: 2822)

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Including integrally formed optical element

C438S149000, C257SE21412

Reexamination Certificate

active

07662651

ABSTRACT:
A plurality of gate lines having gate electrodes are formed on a substrate and a semiconductor layer is formed on a gate insulating layer covering the gate lines. A plurality of data lines intersecting the gate lines are formed on the gate insulating layer and a plurality of drain electrodes are formed extending parallel with and adjacent to the data lines. Furthermore, a plurality of storage capacitor conductors are formed to be connected to the drain electrodes and to overlap an adjacent gate line. A passivation layer made of an organic material is formed on the above structure and has a contact hole. Furthermore, a plurality of pixel electrodes are formed to be electrically connected to the drain electrodes through the contact hole.

REFERENCES:
patent: 6590226 (2003-07-01), Kong et al.
patent: 6656775 (2003-12-01), Matsukawa
patent: 2002/0180900 (2002-12-01), Chae et al.
patent: 2003/0151095 (2003-08-01), You et al.
patent: 2003/0197187 (2003-10-01), Kim et al.
patent: 2004/0007704 (2004-01-01), Kim
patent: 2004/0051103 (2004-03-01), Hong et al.
patent: 2004/0113149 (2004-06-01), Kim
patent: 2004/0262611 (2004-12-01), Lai

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